| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c1e49aee5e8b4d0893942406354c171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_efd9ba30c7d27a4c96fcd91b893602e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294c3b44de1f2f7a2b90eaa85d62ca45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0cd7db5c95d26a9e29a241901031721 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-18161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-81005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49575 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-49 |
| filingDate |
2012-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e017931ed697341bd943953f125d2d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4787477430d5a1c520eff941c79759d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a778c59b1127ae87a3ef8ba45de40a28 |
| publicationDate |
2015-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9177901-B2 |
| titleOfInvention |
Semiconductor device and method of stacking die on leadframe electrically connected by conductive pillars |
| abstract |
A semiconductor device has a first semiconductor die mounted to a first contact pad on a leadframe or substrate with bumps. A conductive pillar is formed over a second semiconductor die. The second die is mounted over the first die by electrically connecting the conductive pillar to a second contact pad on the substrate with bumps. The second die is larger than the first die. An encapsulant is deposited over the first and second die. Alternatively, the conductive pillars are formed over the substrate around the first die. A heat sink is formed over the second die, and a thermal interface material is formed between the first and second die. An underfill material is deposited under the first semiconductor die. A shielding layer is formed between the first and second die. An interconnect structure can be formed over the second contact pad of the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600679-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10242948-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9559039-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018138083-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014077389-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015001713-A1 |
| priorityDate |
2009-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |