http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9093261-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2014-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa1f9817975f3dc0f55960cb86630da4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8404b3333a5d2acad9c87fc1d1e28230 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cb69013e1dbc9dcaa9f54644d0b333e |
| publicationDate | 2015-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9093261-B2 |
| titleOfInvention | Method of manufacturing semiconductor device |
| abstract | A method of manufacturing a semiconductor device includes processing a semiconductor substrate using a plasma etching apparatus provided with a processing chamber. The semiconductor substrate has an uneasily-etched material formed thereabove and at least an upper layer film formed above the uneasily-etched material. The method includes etching the upper layer film after loading the semiconductor substrate into the processing chamber; forming a lift-off layer along an inner wall of the processing chamber with the semiconductor substrate loaded in the processing chamber; etching the uneasily-etched material and causing deposition of a reactive product of the uneasily-etched material along the lift-off layer; and cleaning, by removing the reactive product by removing the lift-off layer, the inner wall of the processing chamber after the semiconductor substrate is unloaded from the plasma etching apparatus. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010098875-A1 |
| priorityDate | 2013-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 73.