| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c45760c5dcc1ef2b8807a4c04b3a7eff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9ee7972382358ddfa766f8cd0b396645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c1e49aee5e8b4d0893942406354c171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af687fe044ae3a57bd114c92fc1ec3b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-1058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-1041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-04941
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-04953
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-12105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-1035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3128
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-568 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_974611d69204890f1024e8e35f9b6a08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c4c25b0751296e89e6fe9553749799f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e82bc3a9ce01449ec61b415826a66bb |
| publicationDate |
2015-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9006888-B2 |
| titleOfInvention |
Semiconductor device and method of forming stress relief layer between die and interconnect structure |
| abstract |
A semiconductor device is made by forming a first conductive layer over a sacrificial carrier. A conductive pillar is formed over the first conductive layer. An active surface of a semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the conductive pillar. The carrier and adhesive layer are removed. A stress relief insulating layer is formed over the active surface of the semiconductor die and a first surface of the encapsulant. The stress relief insulating layer has a first thickness over the semiconductor die and a second thickness less than the first thickness over the encapsulant. A first interconnect structure is formed over the stress relief insulating layer. A second interconnect structure is formed over a second surface of encapsulant opposite the first interconnect structure. The first and second interconnect structures are electrically connected through the conductive pillar. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10283443-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9941195-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10468345-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10777515-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019333880-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020185341-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11088095-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269691-B2 |
| priorityDate |
2008-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |