http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8993449-B2

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
filingDate 2010-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_116152cbd1675029e1c3bace0ec61960
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7982287e6375045fb16eab167014d466
publicationDate 2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8993449-B2
titleOfInvention Etching method
abstract There is provided an etching method which can form trenches or via holes having desired aspect ratios and shapes in a to-be-processed object made of silicon. The etching method includes: a hydrogen halide-containing gas-based etching step of etching a silicon substrate by introducing a hydrogen halide-containing gas into a vacuum chamber; a fluorine-containing gas-based etching step of etching the silicon substrate by introducing a fluorine-containing gas into the vacuum chamber; a protective film formation step forming a protective film on the silicon substrate by sputtering a solid material; and a protective film removal step of removing part of the protective film by applying radio frequency bias power to a substrate electrode. The fluorine-containing gas-based etching step, the protective film formation step, and the protective film removal step are repeatedly performed in this order.
priorityDate 2009-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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