| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82a9e22a923eca64a02a97f0dfb493ed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06589
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05571
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-38 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-24 |
| filingDate |
2013-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b20f2473b4cd1e2f31e18a5e0b9a5748
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09ad62f8cc58a09ce3bdce9609e497e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d51688c1cafa772df3696070f1e584c0 |
| publicationDate |
2015-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8987062-B2 |
| titleOfInvention |
Active thermal control for stacked IC devices |
| abstract |
Thermal conductivity in a stacked IC device can be improved by constructing one or more active temperature control devices within the stacked IC device. In one embodiment, the control devices are thermal electric (TE) devices, such as Peltier devices. The TE devices can then be selectively controlled to remove or add heat, as necessary, to maintain the stacked IC device within a defined temperature range. The active temperature control elements can be P-N junctions created in the stacked IC device and can serve to move the heat laterally and/or vertically, as desired. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9773717-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10103083-B2 |
| priorityDate |
2008-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |