| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03e9da54cc0daf284ca30e280d772127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_90ca56301cd20fe85810df8dc455d1fc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2012-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_437193a73edea0b33d5e2f37c00a2015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b508f3497fe9ff7b888ee22174cabc35 |
| publicationDate |
2015-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8975188-B2 |
| titleOfInvention |
Plasma etching method |
| abstract |
A plasma etching method is provided for forming a hole using a first processing gas to etch a silicon layer of a substrate to be processed including a silicon oxide film that is formed into a predetermined pattern. The method includes a first depositing step (S 11 ) of depositing a protective film on a surface of the silicon oxide film using a second processing gas containing carbon monoxide gas, a first etching step (S 12 ) of etching the silicon layer using the first processing gas, a second depositing step (S 13 ) of depositing the protective film on a side wall of a hole etched by the first etching step using the second processing gas, and a second etching step (S 14 ) of further etching the silicon layer using the first processing gas. The second depositing step (S 13 ) and the second etching step (S 14 ) are alternately repeated at least two times each. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019096685-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10115602-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9397007-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10541143-B2 |
| priorityDate |
2011-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |