Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6749c7ac58b3c665a1b02d15c02e98f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_96a84102fef885d41b40e0f0b73afca5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-57 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-503 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4587 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-515 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-57 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-515 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-503 |
filingDate |
2009-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5a5500137c8cba67e4b74882ae1be10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_546c36c523e2c76d39be000204dc654c |
publicationDate |
2015-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8945690-B2 |
titleOfInvention |
Method and apparatus for mass-producing DLC films |
abstract |
A DLC film mass-producing apparatus 10 includes a chamber 12 connected to ground. In the chamber 12 , a plurality of plate-shaped substrates 60 are disposed in parallel at regular intervals, without disposing a counter electrode that faces each of the plate-shaped substrates 60 . Sputtering cleaning is then conducted by plasma discharge and an underlying contact layer is formed on each of the plate-shaped substrates 60 . Subsequently, a DLC film is produced on each of the plate-shaped substrates 60 by injecting a carbon source gas into the chamber 12 such that the internal pressure of the chamber 12 reaches 0.1 to 10 Pa and applying a negative DC pulse voltage having a pulse half width of 0.1 to 3 μsec to each of the plate-shaped substrates 60 to generate plasma. |
priorityDate |
2008-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |