Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39f78de839be3afc2c8d98e2617c0dfb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate |
2011-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c3fcb237596493fd5eb9809f23a60c1 |
publicationDate |
2015-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8937022-B2 |
titleOfInvention |
Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus |
abstract |
A method of manufacturing a semiconductor device includes: housing a substrate into a processing chamber; and forming a metal nitride film on the substrate by supplying a source gas containing a metal element, a nitrogen-containing gas and a hydrogen-containing gas into the processing chamber; wherein in forming the metal nitride film, the source gas and the nitrogen-containing gas are intermittently supplied into the processing chamber, or the source gas and the nitrogen-containing gas are intermittently and alternately supplied into the processing chamber, or the source gas is intermittently supplied into the processing chamber in a state that supply of the nitrogen-containing gas into the processing chamber is continued, and the hydrogen-containing gas is supplied into the processing chamber during at least supply of the nitrogen-containing gas into the processing chamber. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014363903-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910217-B2 |
priorityDate |
2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |