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publicationDate 2015-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8932955-B1
titleOfInvention Triple patterning NAND flash memory with SOC
abstract A NAND flash memory array is initially patterned by forming a plurality of sidewall spacers according along sides of patterned portions of material. The pattern of sidewall spacers is then used to form a second pattern of hard mask portions including first hard mask portions defined on both sides by sidewall spacers and second hard mask portions defined on only one side by sidewall spacers.
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