| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2636 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B13-24 |
| filingDate |
2014-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cefe12ecebae7ad1def9d44bb26ecb59 |
| publicationDate |
2014-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8906725-B2 |
| titleOfInvention |
Crystallization processing for semiconductor applications |
| abstract |
A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9455145-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9196753-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9290858-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015013588-A1 |
| priorityDate |
2009-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |