| abstract |
PROBLEM TO BE SOLVED: To provide a method for producing a crystallized semiconductor thin film by using a concave portion having a smaller aspect ratio than before. (A) A plurality of recesses are formed on a substrate surface. (B) An amorphous or polycrystalline silicon film is formed on the substrate so as to fill the recess in the previous period. (C) The first laser pulse is incident on a part of the silicon film to heat the silicon film, and the second influence is left at the same position in a state where the thermal influence of the first laser pulse remains. Is incident, the silicon film at the incident position is temporarily melted and crystallized. [Selection] Figure 1 |