| abstract |
In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR 1 R 2 R 3 , where R 1 , R 2 and R 3 are each independently at least one selected from the group consisting of H, CH 3 , C 2 H 5 , C 3 H 7 , C 4 H 9 , Si(CH 3 ) 3 , NH 2 , NH(CH 3 ), N(CH 3 ) 2 , NH(C 2 H 5 ) and N(C 2 H 5 ) 2 . |