| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e74d9cca0cdd7d0037547c29fac6c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_099413ae0cf5a2b6398b5151766cd260
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4fe3d38e88fccfe566d668b0948434ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c828a320827d10cf513e99a82144dcb2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b4ee81c659f43c7c87c627ff56d33165 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02672 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2012-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af992ddd6d357fbe5ca76da212014b77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef27048d789e7fe8b49c0ee749eeec4e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8071b1c4fa5286e6198fd7bd081d1ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d1b387834b136696239f251c6366c47 |
| publicationDate |
2014-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8841194-B2 |
| titleOfInvention |
Method of forming polysilicon layer and method of manufacturing thin film transistor using the polysilicon layer |
| abstract |
In one aspect, a method of forming a polysilicon (poly-Si) layer and a method of manufacturing a thin film transistor (TFT) using the poly-Si layer is provided. In one aspect, the method of forming a polysilicon (poly-Si) layer includes forming an amorphous silicon (a-Si) layer on a substrate in a chamber; cleaning the chamber; removing fluorine (F) generated while cleaning the chamber; forming a metal catalyst layer for crystallization, on the a-Si layer; and crystallizing the a-Si layer into a poly-Si layer by performing a thermal processing operation. |
| priorityDate |
2011-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |