http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080001497-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1007735376d07808ebe297f823b2829 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9d904ae45d9533fa2401a75b1a8556e |
| publicationDate | 2008-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080001497-A |
| titleOfInvention | Method of manufacturing thin film transistor |
| abstract | The present invention relates to a method of manufacturing a thin film transistor, comprising the steps of preparing a substrate, forming a silicon layer on the substrate, doping the silicon layer BF x or F, and the silicon layer active layer Patterning, forming a gate electrode on the active layer, forming a source region and a drain region in a predetermined region of the active layer, and connecting the source electrode and the drain region connected to the source region. Forming a drain electrode is characterized in that it comprises. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8841194-B2 |
| priorityDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 17.