| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3fa07df9b9f09fd9b3d4e76737ed5bba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ddd71bf32939dd5ef39ecabe399534e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c2a7c70c2d82330931522f787e2cdb8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 |
| filingDate |
2009-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73e46bebd9cf17eb173eb2a8fc5c67cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8be779311a366021c16b505e3b535a4e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5cefa3f0f538d1661e6d95f26006987 |
| publicationDate |
2014-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8829555-B2 |
| titleOfInvention |
Semiconductor light emission element |
| abstract |
A semiconductor light emission element ( 1 ) includes: a substrate ( 110 ); multi-layered semiconductor layers ( 100 ) including a light emission layer ( 150 ) and layered on the substrate ( 110 ); a transparent electrode ( 170 ) including an indium oxide and layered on the multi-layered semiconductor layers ( 100 ); a first junction layer ( 190 ) including tantalum as a valve action metal and layered on the transparent electrode ( 170 ) in such a manner that a side of the first junction layer ( 190 ) being in contact with the transparent electrode ( 170 ) is a tantalum nitride layer or a tantalum oxide layer; and a first bonding pad electrode ( 200 ) layered on the first junction layer ( 190 ) and used for electrical connection with outside. This improves a bonding property of the transparent electrode or the semiconductor layer with the connection electrode and reliability of the electrodes. |
| priorityDate |
2008-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |