| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride semiconductor light emitting device, and in particular, an n-type nitride semiconductor layer formed on a substrate and the substrate, an active layer formed on a predetermined region on the n-type nitride semiconductor layer, and a p-type nitride formed on the active layer. A semiconductor layer, a p-type electrode formed on the p-type nitride semiconductor layer, and an n-type electrode formed on an n-type nitride semiconductor layer on which the active layer is not formed, wherein the p-type electrode and the n-type electrode The present invention provides a nitride-based semiconductor light emitting device comprising a multilayer structure in which an ohmic contact layer, a compound layer containing aluminum or silver, and a deterioration prevention layer are sequentially stacked. |