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publicationDate 2014-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8801896-B2
titleOfInvention Method and apparatus for stable plasma processing
abstract A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.
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