| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c59894cbfb6af472c9b1fa062ffd3dab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_84a8c55a2c046b4b866f457dd810e925
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8ddf0a06e18e72bd7d0d0379d3777886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82f3b936993be92171c6b602aaee3bd8 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26526
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-42 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2010-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80003953874a419b9ce9e51653682c91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78e36aaff6cbbed546ebbadff0046822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b60abea9c7015f87450f0175f4fa2fae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d0389c1ae768e9428489cb66a85f175 |
| publicationDate |
2014-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8785286-B2 |
| titleOfInvention |
Techniques for FinFET doping |
| abstract |
A method of forming an integrated circuit includes providing a semiconductor wafer including a semiconductor fin dispatched on a surface of the semiconductor wafer; forming a dopant-rich layer having an impurity on a top surface and sidewalls of the semiconductor fin, wherein the impurity is of n-type or p-type; performing a knock-on implantation to drive the impurity into the semiconductor fin; and removing the dopant-rich layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10535768-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10276692-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910483-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355635-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249542-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622354-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9741717-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978866-B2 |
| priorityDate |
2010-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |