Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
filingDate |
2017-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fba84a51998491ecf646d5effa33e72d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae1bef5f136bcc22ef9b8ccd681ab804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50ec5d6304eb8d7b3fd673fc5772ae8e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39d3cd30365622b0081dee9e814a118d |
publicationDate |
2019-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10249542-B2 |
titleOfInvention |
Self-aligned doping in source/drain regions for low contact resistance |
abstract |
Embodiments are directed to a method of forming a semiconductor device and resulting structures having reduced source/drain contact resistance. The method includes forming a first semiconductor fin in a first region of a substrate and a second semiconductor fin in a second region of the substrate. A first gate is formed over a first channel region of the first semiconductor fin and a second gate is formed over a first channel region of the second semiconductor fin. A first doped region is formed on the first semiconductor fin, adjacent to the first gate. A second doped region is formed in a top portion of the first doped region and a third doped region is formed in a top portion of the second semiconductor fin. The third doped region is removed to form a recess and the recess is filled with a fourth doped region. |
priorityDate |
2017-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |