| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b196bcbcf71dde9134d9a67eacb70eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_21095a6dc7dac10483add808adb4fa32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5f7f120efe096284c7389702c969cf3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b593d2847a68f8aa06f39a4d480c3ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_679f87544ce2acdd938693b4b66be455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb79b65527eb405a2b87ac2558587392 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2011-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec587b4769756c463af0f81d6f184037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_900e29c818dcd9633dcb78aa635e2b9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e87c901365872314bc7ed8fc3199bf2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78d671c39c50cca375728e68fd773d80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63bf6d3c87f4bf84c98277a8bea29eff |
| publicationDate |
2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8765613-B2 |
| titleOfInvention |
High selectivity nitride etch process |
| abstract |
An anisotropic silicon nitride etch provides selectivity to silicon and silicon oxide by forming a fluorohydrocarbon-containing polymer on silicon surfaces and silicon oxide surfaces. Selective fluorohydrocarbon deposition is employed to provide selectivity to non-nitride surfaces. The fluorohydrocarbon-containing polymer interacts with silicon nitride to form a volatile compound, thereby enabling etching of silicon nitride. The fluorohydrocarbon-containing polymer interacts with silicon oxide at a low reaction rate, retarding, or completely stopping, the etching of silicon oxide. The fluorohydrocarbon-containing polymer does not interact with silicon, and protects silicon from the plasma. The anisotropic silicon nitride etch can be employed to etch silicon nitride selective to silicon and silicon oxide in any dimension, including small dimensions less than 50 nm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11257716-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11222820-B2 |
| priorityDate |
2011-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |