| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_560f738c470c40912d0d1f9025cd85d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2df86751083be8491ccad7cd091d190e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 |
| filingDate |
2008-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e018e01afcf98ff11cb97f5a3d3fd301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14a1c1bc8102c35731642a48adbcec8a |
| publicationDate |
2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8765507-B2 |
| titleOfInvention |
Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp |
| abstract |
A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T 1 ; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T 2 which is lower than the temperature T 1. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014045289-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9130069-B2 |
| priorityDate |
2007-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |