| abstract |
High deposition rate sputtering methods are used to produce bulk, single crystal, low defect density Group III nitrides suitable for microelectronic and optoelectronic devices and substrates for subsequent epitaxy processes, or to produce aligned polycrystalline windows. A template material is provided having an epitaxy starting growth surface. Group III metal targets are sputtered in a plasma enhanced environment using a sputtering apparatus that includes a non-thermal ion electron / plasma injector assembly to produce a Group III metal source vapor. The Group III metal source vapor combines with the nitrogen containing gas to produce a vapor reactive species comprising Group III metal and nitrogen. Vapor reactive species are deposited on the growth surface to form a single crystal M III N layer on the growth surface. The template material is removed to provide free standing, single crystal M III N water having a diameter of at least 0.5 inches and a thickness of at least 50 μm. |