| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2012-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d26c9f25058c05ca22dc704c6a161d52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b1ec268d6906e637acbaabfece83803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fafc82f38cde072dbb448590c2566d9 |
| publicationDate |
2014-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8742510-B2 |
| titleOfInvention |
Semiconductor devices with replacement gate structures having conductive contacts positioned therebetween |
| abstract |
Disclosed herein are various methods of forming replacement gate structures and conductive contacts on semiconductor devices and devices incorporating the same. One exemplary device includes a plurality of gate structures positioned above a semiconducting substrate, at least one sidewall spacer positioned proximate respective sidewalls of the gate structures, and a metal silicide region in a source/drain region of the semiconducting substrate, the metal silicide region extending laterally so as to contact the sidewall spacer positioned proximate each of the gate structures. Furthermore, the device also includes, among other things, a conductive contact positioned between the plurality of gate structures, the conductive contact having a lower portion that conductively contacts the metal silicide region and an upper portion positioned above the lower portion, wherein the lower portion is laterally wider than the upper portion and extends laterally so as to contact the sidewall spacers positioned proximate each of the gate structures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812552-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9985104-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017194452-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11043598-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818659-B2 |
| priorityDate |
2011-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |