http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8722542-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23d994b3d26382b3031313e93e543007 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24d63ca0d992a0d5b79dc3feb1f7779b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_971eed1a996afe909828d52547473145 |
| publicationDate | 2014-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8722542-B2 |
| titleOfInvention | Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via |
| abstract | A method for patterning a layer at a bottom of a high aspect ratio feature of a substrate is described. The method includes providing the substrate having a first layer with a feature pattern overlying a second layer. The feature pattern is characterized with an initial critical dimension (CD), an initial corner profile, and an aspect ratio of 5:1 or greater. The method further includes etching through at least a portion of the second layer at the bottom of the feature pattern to extend the feature pattern at least partially into the second layer while retaining a final CD within a threshold of the initial CD and a final corner profile within a threshold of the initial corner profile using a gas cluster ion beam (GCIB) etching process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9236221-B2 |
| priorityDate | 2012-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.