| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b6a4e4f35f65ee82c86e76e014c4639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9e2f0aa61134a779e0d406d04a7ff51e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b8d258d7ec225d4918453e5c0e314ef8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82a9e22a923eca64a02a97f0dfb493ed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-0709
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-107 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-107 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate |
2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39ae893c2be37fff72e53e66eab66e84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe2ceca9f29b6426fd029184047dfb46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d74b4162dcb209042781f229ed1c474a |
| publicationDate |
2014-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8703602-B2 |
| titleOfInvention |
Selective seed layer treatment for feature plating |
| abstract |
Conventional metallization processes fail at high density or small feature size patterns. For example, during patterning dry films may collapse or lift-off resulting in short circuits or open circuits in the metallization pattern. An exemplary method for metallization of integrated circuits includes forming features such as trenches, pads, and planes in a dielectric layer and depositing and selectively treating a seed layer in desired features of the dielectric layer. The treated regions of the seed layer may be used as a seed for electroless deposition of conductive material, such as copper, into the features. When the seed layer is a catalytic ink, the seed layer may be treated by curing the catalytic ink with a laser. |
| priorityDate |
2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |