| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_79df76a6a4dc6a2a3d3bdb35c1eb9615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f972cbb1032d0a8fc82304958a3beae0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e408fc900acc0c4a95951456b32d48a5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-701 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-701
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2009-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06f5a96f4168ec56d98a7c06b3311764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_688686ae89508035ae22b786bafae918
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_119738f1f81104329e45118c8bb44354 |
| publicationDate |
2014-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8642987-B2 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
The invention provides a novel memory for which process technology is relatively simple and which can store multivalued information by a small number of elements. A part of a shape of the first electrode in the first storage element is made different from a shape of the first electrode in the second storage element, and thereby voltage values which change electric resistance between the first electrode and the second electrode are varied, so that one memory cell stores multivalued information over one bit. By partially processing the first electrode, storage capacity per unit area can be increased. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11762423-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10186311-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9735163-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11531372-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10824193-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11054858-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127732-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8957423-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10020296-B2 |
| priorityDate |
2006-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |