| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2320-0252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2320-0233 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3241 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-14 |
| filingDate |
2013-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00493c8d5b956f1a1dbffaf60e57a6c7 |
| publicationDate |
2013-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8604704-B2 |
| titleOfInvention |
Semiconductor device |
| abstract |
A light emitting device capable of performing signal electric current write-in operations at high speed and without dispersion in the characteristics of TFTs structuring pixels influencing the brightness of light emitting elements is provided. The gate length L of a transistor in which an electric current flows during write-in of a signal electric current is made shorter than the gate length L of a transistor in which electric current supplied to EL elements flows during light emission, and high speed write-in is thus performed by having a larger electric current flow than the electric current flowing in conventional EL elements. A converter and driver transistor ( 108 ) is used for signal write-in. By using the converter and driver transistor ( 108 ) and a driver transistor ( 107 ) when supplying electric current to a light emitting element during light emission, dispersion in the transistor characteristics can be made to have less influence on brightness than when using a structure in which write-in operations and light emission operations are performed using different transistors. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9054199-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9577016-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11694594-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10680049-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10461140-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9905624-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11488528-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11063102-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10546529-B2 |
| priorityDate |
2001-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |