| abstract |
A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films ( 115 ) and ( 116 ) of a driver TFT are designed thinner than a gate insulating film ( 117 ) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films ( 115 ) and ( 116 ) of the driver TFT and a dielectric ( 118 ) of a storage capacitor are formed at the same time, so that the dielectric ( 118 ) may be extremely thin, and a large capacity can be secured. |