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filingDate 2012-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8592311-B2
titleOfInvention Semiconductor device and method for forming passive circuit elements with through silicon vias to backside interconnect structures
abstract A semiconductor wafer contains a substrate having a plurality of active devices formed thereon. An analog circuit is formed on the substrate. The analog circuit can be an inductor, metal-insulator-metal capacitor, or resistor. The inductor is made with copper. A through substrate via (TSV) is formed in the substrate. A conductive material is deposited in the TSV in electrical contact with the analog circuit. An under bump metallization layer is formed on a backside of the substrate in electrical contact with the TSV. A solder material is deposited on the UBM layer. The solder material is reflowed to form a solder bump. A wire bond is formed on a top surface of the substrate. A redistribution layer is formed between the TSV and UBM. The analog circuit electrically connects through the TSV to the solder bump on the back side of the substrate.
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priorityDate 2007-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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