| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbc56c0fcc83675776bc04e4ddfd6726
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_45fe70967367ad89683129c650c1487a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B15-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D53-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-14 |
| filingDate |
2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17a444670695083269941e12b133bb4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_353314ce201a681c61d0fc9c4a7b53f9 |
| publicationDate |
2013-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8585820-B2 |
| titleOfInvention |
Abatement of reaction gases from gallium nitride deposition |
| abstract |
Methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment and methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010242835-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9845550-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015140791-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015233016-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10458040-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018348034-A1 |
| priorityDate |
2006-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |