http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015140791-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_646018b7183a929bbb6e26dcdb62a8da |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01F7-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G15-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G15-00 |
| filingDate | 2015-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a8a3046fc910bef3ce84af0ac38104d |
| publicationDate | 2015-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2015140791-A1 |
| titleOfInvention | Apparatus for producing metal chloride gas and method for producing metal chloride gas, and apparatus for hydride vapor phase epitaxy, nitride semiconductor wafer, nitride semiconductor device, wafer for nitride semiconductor light emitting diode, method for manufacturing nitride semiconductor freestanidng substrate and nitride semiconductor crystal |
| abstract | There is provided an apparatus for producing metal chloride gas, comprising: a source vessel configured to store a metal source; a gas supply port configured to supply chlorine-containing gas into the source vessel; a gas exhaust port configured to discharge metal chloride-containing gas containing metal chloride gas produced by a reaction between the chlorine-containing gas and the metal source, to outside of the source vessel; and a partition plate configured to form a gas passage continued to the gas exhaust port from the gas supply port by dividing a space in an upper part of the metal source in the source vessel, wherein the gas passage is formed in one route from the gas supply port to the gas exhaust port, with a horizontal passage width of the gas passage set to 5 cm or less, with bent portions provided on the gas passage. |
| priorityDate | 2011-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.