| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5383
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5386
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0753
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate |
2013-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23f3d39ee8ed40c55008a74e88566528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4288825595098da173179e8f10ea5d2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87d7546e8ae0b4343f8e5ad5f9ea3920
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37d618bbc6c92f791b8336b76e8c27a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb213879a3d808876e13769e95d55d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28b13b00b7e235f99013f457aab3b1a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91426d3404f8ea78d90c38fcd367c334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a22a3789668ef019dc0f6752a7efcf97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a8eada9b3fdf3843a1129630f49a43c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bad91758f66e2fc497650427fee763b |
| publicationDate |
2013-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8575725-B2 |
| titleOfInvention |
Through-silicon vias for semicondcutor substrate and method of manufacture |
| abstract |
A semiconductor component includes a semiconductor substrate having a top surface. An opening extends from the top surface into the semiconductor substrate. The opening includes an interior surface. A first dielectric liner having a first compressive stress is disposed on the interior surface of the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner. A metal barrier layer is disposed on the third dielectric liner. A conductive material is disposed on the metal barrier layer and fills the opening. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11545392-B2 |
| priorityDate |
2011-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |