| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d7512b7519f8382145250459465653d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb9cdc9868881f4f7cb945afa19e0d99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_064c8e5f3581e1b4874b72b510de900d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d68597e12dc5185f51515b1a9e8476db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d2bfad816bac0bffc5c15e348079f70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ce9ffce41948cb062486d2c71703465 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7809
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2010-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_430444c8806fe3232487e12589483999
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3554c40f3a7fb452cd9ff09742efd6fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20b53883d4b2b823992f53c07e893103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_774cfc4228a9b3802b3bcd68fd550dec |
| publicationDate |
2013-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8530961-B2 |
| titleOfInvention |
Compatible vertical double diffused metal oxide semiconductor transistor and lateral double diffused metal oxide semiconductor transistor and manufacture method thereof |
| abstract |
A method for manufacturing compatible vertical double diffused metal oxide semiconductor (VDMOS) transistor and lateral double diffused metal oxide semiconductor (LDMOS) transistor includes: providing a substrate having an LDMOS transistor region and a VDMOS transistor region; forming an N-buried region in the substrate; forming an epitaxial layer on the N-buried layer region; forming isolation regions in the LDMOS transistor region and the VDMOS transistor region; forming a drift region in the LDMOS transistor region; forming gates in the LDMOS transistor region and the VDMOS transistor region; forming PBODY regions in the LDMOS transistor region and the VDMOS transistor region; forming an N-type GRADE region in the LDMOS transistor region; forming an NSINK region in the VDMOS transistor region, where the NSINK region is in contact with the N-buried layer region; forming sources and drains in the LDMOS transistor region and the VDMOS transistor region; and forming a P+ region in the LDMOS transistor region, where the P+ region is in contact with the source. |
| priorityDate |
2009-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |