| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_02a741bcc76d2c6156369e5592109597 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
2011-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4425ed6c3d52a027bf5250b1a8d12ed1 |
| publicationDate |
2013-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8470688-B2 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor layer including a first channel formation region and a first impurity region over a substrate having an insulating surface, a first gate insulating layer over the first single-crystal semiconductor layer, a gate electrode over the first gate insulating layer, a first interlayer insulating layer over the first gate insulating layer, a second gate insulating layer over the gate electrode and the first interlayer insulating layer, and a second single-crystal semiconductor layer including a second channel formation region and a second impurity region over the second gate insulating layer. The first channel formation region, the gate electrode, and the second channel formation region are overlapped with each other. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016086980-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9368501-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10002968-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013234205-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11574845-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10680110-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8907392-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302819-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312260-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9680027-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837438-B2 |
| priorityDate |
2007-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |