| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2af4fa54541ffebbf8d9c243383df60 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-788 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate |
2012-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26d81f7e8c4cfa9dee6a123d40e0fbd7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b8e05c6f26cd971252a5f731034104a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abb7ab490d818ec423a23d4a2cde0e84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8821625df30a41caa5d084cbab3223b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32367ad45e7887670053fcbf70dc84f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59d0fffad2bbacfbb622eef124f7c801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff1d476ddc9131f8fcab0d8594e8a292 |
| publicationDate |
2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8461641-B2 |
| titleOfInvention |
Ultrahigh density vertical NAND memory device and method of making thereof |
| abstract |
Monolithic three dimensional NAND string includes a semiconductor channel having a U-shaped pipe shape. A plurality of control gate electrodes having a strip shape extends substantially parallel to the major surface of the substrate. The plurality of control gate electrodes include at least a first control gate electrode located in a first device level and a second control gate electrode located in a second device level located over the major surface of the substrate and below the first device level. A cut area separates the plurality of control gate electrodes in a direction substantially perpendicular to the major surface of the substrate. A blocking dielectric is located in contact with the plurality of control gate electrodes, a charge storage region located in contact with the blocking dielectric and a tunnel dielectric is located between the charge storage region and the semiconductor channel. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9620514-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11049946-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593693-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013341701-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014307508-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9214235-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11678490-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9960180-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152366-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9991277-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011542-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11329065-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837431-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11729960-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11777005-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9935124-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9935123-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666594-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812463-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114470-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10529413-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9627399-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015021539-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10056131-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020176156-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9728546-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11626422-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10665604-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10886292-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355179-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879260-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622368-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11682667-B2 |
| priorityDate |
2010-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |