| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_045829eeb980c895e942ffe883cf7ce2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f801e2dc40132ece848d9725e1183aa3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed7bda5d2c01f9fbb3df0d2437d3042a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ee188aebaa36dd59049529e129ecf86 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-80 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2011-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d39b7458e632a7e6437eb27fe24c5acf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d900c78aa1617f4b41a8fa2843641aac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b8f3f5c6750c2e564583eff961e6b82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5eccddb854ace2952cf5df89d1aa43db |
| publicationDate |
2013-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8354737-B2 |
| titleOfInvention |
Small area, robust silicon via structure and process |
| abstract |
A semiconductor structure includes: at least one silicon surface wherein the surface can be a substrate, wafer or other device. The structure further includes at least one electronic circuit formed on each side of the at least one surface; and at least one conductive high aspect ratio through silicon via running through the at least one surface. Each through silicon via is fabricated from at least one etch step and includes: at least one thermal oxide dielectric for coating at least some of a sidewall of the through silicon via for a later etch stop in fabrication of the through silicon via. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127654-B2 |
| priorityDate |
2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |