| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8db6c6b6b74873332bb3ebf81cbdddca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b0d5354f438e79903b318c69fd3300f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_104cdc028007882dd01d23e78a2148b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f2c7660ec67e6f3463d165443c2663c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8027bc33e6ab8b80a19db698e7b5b43d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8720d8da2dbbf32f0e6b3b3f4a6785b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_21dc91f24604ede97f75c5662c9bb9aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ce320c5319032196ff6a9a8545657aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf3d8cdb4ef93a78c7cc4222ac85e97a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2012-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_937c7889b1939ce028a7656e30b0dcb5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_133edba96ae33683587b216b9e6c347c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39440b37e996d19ef6f772d03ff2a0a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da1a8b1df2b3e5aaf9e67ed65afff175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e975f19d548c7fbe22ac0b6af93cc4d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_890a8056fea10d24f171395dff91d13e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_143a47854d4c7a54cf1b222a925671ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_880e54faa5c3758901c2546ebe5422fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e275da0745f84ed560b0d3de0e089269 |
| publicationDate |
2013-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8354309-B2 |
| titleOfInvention |
Method of providing threshold voltage adjustment through gate dielectric stack modification |
| abstract |
Multiple types of gate stacks are formed on a doped semiconductor well. A high dielectric constant (high-k) gate dielectric is formed on the doped semiconductor well. A metal gate layer is formed in one device area, while the high-k gate dielectric is exposed in other device areas. Threshold voltage adjustment oxide layers having different thicknesses are formed in the other device areas. A conductive gate material layer is then formed over the threshold voltage adjustment oxide layers. One type of field effect transistors includes a gate dielectric including a high-k gate dielectric portion. Other types of field effect transistors include a gate dielectric including a high-k gate dielectric portion and a first threshold voltage adjustment oxide portions having different thicknesses. Field effect transistors having different threshold voltages are provided by employing different gate dielectric stacks and doped semiconductor wells having the same dopant concentration. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9177865-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11664437-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9472553-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573747-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015171218-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859279-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312340-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8865538-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013256803-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9780183-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10978570-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9362282-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10262999-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10002871-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502416-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004953-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10217745-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9947671-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9219155-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10978582-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019148530-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437511-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018233507-A1 |
| priorityDate |
2009-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |