abstract |
To facilitate bonding of articles at a low temperature without degrading electrical contact between the articles. n An oxide film reducing treatment with hydrogen radicals is carried out for surfaces of lead-out electrodes ( 5 ) and bump electrodes ( 6 ) on the lead-out electrodes ( 5 ) of a semiconductor chip ( 2 ) and surfaces of lead-out electrodes ( 8 ) of an intermediate substrate ( 3 ), and, after that, the bump electrodes ( 6 ) of the semiconductor chip ( 2 ) and the lead-out electrodes ( 8 ) of the intermediate substrate ( 3 ) are aligned with each other. After that, a pressure is applied to bond the bump electrodes ( 6 ) and the lead-out electrodes ( 8 ). |