| abstract |
Affords Al x Ga 1-x N crystal growth methods, as well as Al x Ga 1-x N crystal substrates, wherein bulk, low-dislocation-density crystals are obtained. n The Al x Ga 1-x N crystal (0<x≦1) growth method is a method of growing, by a vapor-phase technique, an Al x Ga 1-x N crystal ( 10 ), characterized by forming, in the growing of the crystal, at least one pit ( 10 p ) having a plurality of facets ( 12 ) on the major growth plane ( 11 ) of the Al x Ga 1-x N crystal ( 10 ), and growing the Al x Ga 1-x N crystal ( 10 ) with the at least one pit ( 10 p ) being present, to reduce dislocations in the Al x Ga 1-x N crystal ( 10 ). |