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publicationNumber US-2002166502-A1
titleOfInvention Low defect density (Ga, Al, In) N and HVPE process for making same
abstract A low defect density (Ga,Al,In)N material. The (Ga, Al, In)N material may be of large area, crack-free character, having a defect density as low as 3×10 6 defects/cm 2 or lower. Such (Ga,Al,In)N material is useful as a substrate for epitaxial growth of Group III-V nitride device structures thereon.
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