| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b71e8908f37fda430ff0cb6e7c4b2c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5347794f0dabb7844b14b5a5b47eb4f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d2a00f2932d2f26f9bc4c81b9cd6345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a937487309c2cfbeb6af78e83508bb49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2011-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ac36f8979db2c0a0c74e1b01779a57b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e725d036d40622eed9da4f14e7d6812a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_327fda1036c251dded3fdcc900e6358c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3be60f16dfcba3d682f73b273aee5d34 |
| publicationDate |
2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8211799-B2 |
| titleOfInvention |
Atomic layer deposition of tungsten materials |
| abstract |
Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8513116-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012244699-A1 |
| priorityDate |
2005-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |