Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b31896b0595e5629c470c80b74b2d2e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ef855c8831278959e8bb68b570adb4d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe17b707bcf5a929eec2bad31f5c00b7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-811 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02472 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
filingDate |
2010-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2012-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bccc78a985b91f36e4a79881bacd66d7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_664805c21b295542713dc4f9f9d7b5ac |
publicationDate |
2012-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8202761-B2 |
titleOfInvention |
Manufacturing method of metal oxide nanostructure and electronic element having the same |
abstract |
Disclosed herein is a manufacturing method of metal oxide nanostructure, including the steps of: (S1) supplying a precursor containing a first metal, a precursor containing a second metal and oxygen onto a substrate; (S2) forming an amorphous second metal oxide layer on the substrate; (S3) forming first nuclei containing the first metal as a main component and second nuclei containing the second metal as a main component on the substrate; (S4) converting the first nuclei into single crystalline seed layers spaced apart from each other and converting the second nuclei into amorphous layers surrounding the first nuclei; and (S5) selectively forming rods on the seed layers and then growing the rods. n The manufacturing method of metal oxide nanostructure is advantageous in that the area and thickness of an amorphous layer can be controlled by controlling the flow rate of the main component of the amorphous layer and the flow rate of the main component of the single crystalline seed layer, thereby controlling the density and diameter of the seed layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9184343-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11320393-B1 |
priorityDate |
2009-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |