| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad697f97df3af85ba45cdadd03f44313
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9a514eb8ce1d3691f731c6b905989e58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_641c08c1c66bf6047281860f45c9a41b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68363 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2011-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ea906b9f870d12d8e567587a85fc4b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_509a57211bdc53228f9403c224449fcb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b06fc69ba9b716c0d12b9529b88b556e |
| publicationDate |
2012-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8173512-B2 |
| titleOfInvention |
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate |
| abstract |
A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11462676-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9041165-B2 |
| priorityDate |
2003-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |