| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2fffccd95666938138e069fee05b4ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa9084b3e03c77abef194653360b7423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_43a9702dc5b38909edf1044c114943d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f75286f4882decbd8307a6404eaa18cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39a91066003fc5d409afba39b370815f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| filingDate |
2009-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e98e41e75efd7dd87241fc671117fc3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f35fb365e4e77c9ee3db277af1d5ea5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcffd900385f16a5a7c013c7266e4d37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfe7ae958194783c704459d974eb3848 |
| publicationDate |
2012-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8163587-B2 |
| titleOfInvention |
Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles |
| abstract |
A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface, and depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents. The method further includes heating the substrate in a baking ambient to a first temperature of between about 200° C. and about 800° C. and for a first time period of between about 3 minutes and about 20 minutes in order to create a densified film ink pattern. The method also includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl 3 , a carrier N 2 gas, a main N 2 gas, and a reactive O 2 gas, wherein a ratio of the carrier N 2 gas to the reactive O 2 gas is between about 1:1 to about 1.5:1, at a second temperature of between about 700° C. and about 1000° C., and for a second time period of about 5 minutes to about 35 minutes. The method also includes heating the substrate in a drive-in ambient to a third temperature of between about 800° C. and about 1100° C. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8853527-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9378957-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9343606-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8912083-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8409976-B2 |
| priorityDate |
2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |