abstract |
A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10 −7 Torr and about 1×10 −4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed. |