| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2518458cb1641e855357a4291a110ff0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd1112283833a51def00561653b1dabc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_739bc718867652fc1b3030c71e61b03f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_16de311d41bfbfbe0744db52def261c1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2007-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc053d4518b186727db0f3114d06e93f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ff72ee738ff86af253057e693b5bbd2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b088c6d570d4bdf3697f4977abc823d7 |
| publicationDate |
2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8080836-B2 |
| titleOfInvention |
Embedded semiconductor component |
| abstract |
A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064798-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059079-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011108854-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9620667-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9601641-B1 |
| priorityDate |
2004-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |