| abstract |
Coarse-grained crystalline or monocrystalline metal or alloy regions are produced on substrates composed of a material selected from the group consisting of a ceramic, a glass and silicon, and which are provided with a layer of an amorphous or disordered metallic film, for example tantalum, by controllably irradiating select regions of the amorphous film with a focused beam of thermal-energy and/or light-energy, such as obtained from a focused laser beam, while substantially simultaneously maintaining the temperature of such substrate at about the temperature utilized in depositing the amorphous film on the substrate, whereby crystallization seeds are generated at the point of beam irradiation and function as a starting point for the crystalline or monocrystalline front on the metallic surface. Via controlled beam guidance, as by a computer, over the amorphous metal coated substrate surface, the crystallization front is extended uniformly in a desired path along the irradiated surface. The process is useful in producing metallizations for integrated semiconductor circuits, manufacture of contact electrodes for silicon solar cells, etc. |