http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8048761-B2

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filingDate 2009-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8048761-B2
titleOfInvention Fabricating method for crack stop structure enhancement of integrated circuit seal ring
abstract An improved crack stop structure (and method of forming) is provided within a die seal ring of an integrated circuit die to increase crack resistance during the dicing of a semiconductor wafer. The crack stop structure includes a stack layer (of alternating insulating and conductive layers) and an anchor system extending from the stack layer to a predetermined point below the surface of the substrate. A crack stop trench is formed in the substrate and filled with material having good crack resistance to anchor the stack layer to the substrate.
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