| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1eb9cd2af2f87dcf20b0fbbdfe79996e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-001 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2010-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b92cf299e25d4a015757d9642886f34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b69ac396a573631afd864e8234cadd94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_259d0bb516ac89444027d48bbf1a3fa8 |
| publicationDate |
2011-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8043967-B2 |
| titleOfInvention |
Process for through silicon via filling |
| abstract |
A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10472730-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8722539-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692735-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11610782-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9109295-B2 |
| priorityDate |
2008-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |