| abstract |
Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: n nwherein: M is Hf or Zr; R is C 1 -C 6 -alkyl; n is zero, 1, 2, 3, 4 or 5; L is C 1 -C 6 -alkoxy. Further methods are provided of forming a metal-containing film by liquid injection atomic layer deposition. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula III:n n nwherein: M is Hf or Zr; R is C 1 -C 6 -alkyl; n is zero, 1, 2, 3, 4 or 5; L is amino, wherein the amino is optionally independently substituted 1 or 2 times with C 1 -C 6 -alkyl. |